The angle_resolved photoemission ( ARPES) is a powerful experiment method to study the surface electronic structure of crystals, such as energy bands, Fermi surface, and many_body interaction. 角分辨光电子能谱(ARPES)是研究晶体表面电子结构,如能带,费米面,以及多体相互作用的重要工具。
In superconductors, the bosons are the pairs of bound electrons that form at the Fermi surface. 在超导体中,玻色子是在费密表面形成的束缚态电子对。
We suggests from the experiment results that in Y-Ba-Cu-O system, certain regions of Fermi surface, those closest to zero boundaries is distorted. Debye temperature of these samples is much higher than 300 K. 由实验结果可得出结论:Y-Br-Cu-O体系靠近带界处的Fermi面是畸变的,样品的Debye温度远大于300K。
Our analysis shows that the difference between the ω variations of J ( 1) for the high K multi-quasiparticle bands and for the ground state band is mainly due to the Pauli blocking effects of high j intruder orbitals near the Fermi surface. 分析表明,高K多准粒子带的J(1)随ω的变化与基态带的不同,主要来自高N(j)闯入态的堵塞效应。
Theory predicts that the periods of the oscillatory coupling should depend on critical spanning vectors of the Fermi surface belonging to the spacer layer material. 理论预测,层间耦合振荡依赖于非铁磁层费米面的临界生成矢量,测量周期和关于费米面的预测已经得到了认可。
And because superconducting electron pairs only occur near the Fermi surface, in the vicinity of the images of Fermi surface, the study on this issue is very important. 由于超导凝聚电子对一般只发生在费米面附近,费米面的图像的研究,对于这个问题的研究有很重要的意义。
Using the lumped surface effects model based on Spicer's unified effect model, two-dimensional numerical simulation on AlGaAs/ GaAs HBT has been performed to investigate the effects of both surface Fermi level pinning and surface recombination on the current gain of the device. 采用表面效应集总模型综合考虑表面费米能级钉扎和表面复合效应,对AlGaAs/GaAsHBT表面效应的影响进行了二维数值模拟。
It is reported that the magnetoresistance ( MR) measurement is a useful tool since it is more sensitive to the change in the charge carrier scattering ratel/ r, effective mass m, and the geometry of the Fermi surface. 理论研究表明磁阻的测量对于理解非常规输运性质是一种很好的工具,因为磁阻对载流子散射率1/τ,有效质量m~和费米面几何形状非常敏感。
A numerical study of the Fermi surface inside a Brillouin zone corner 布里渊区角顶附近的费米面的计算
Finally, according to the concept of quasi-heterojunction the Fermi energy level pinning on the surface is discussed. 从准异质结的概念出发,讨论了表面费米能级钉扎现象。
Surface impedance of metals in infrared region is calculated for an arbitrary Fermi surface. Expressions applicable to all cases of skin-effect ( normal, anomalous and intermediate) are obtained. 本文中对任意费米面求出了金属在红外波段的表面电阻,所得表达式适用于各种性质的趋肤效应(正常、反常和中间情况)。
Pinning Theory of Fermi Energy and Surface State Measurement of ZnSnO_ ( 3) Gas Sensitive Material Fermi能级钉扎理论及ZnSnO3气敏材料表面态测定
Fermi Surface of Two-dimensional Square Lattice Free Electron Gas 二维正方格子自由电子气的费米面
The quantitative results about shift of Fermi surface, widening of energy band width and varying of atomic valence of each crystal site are given. 给出了高压下费米面移动、能带展宽和各晶位原子价变化的定量结果。
The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface. 模型以氢钝化SiC表面悬挂键,降低SiC表面的界面态密度,消除了费米能级钉扎,获得理想的SiC表面。
In the quasi-one-dimensional conductors, the strong anisotropy of the electronic structure and special topology structure of the Fermi surface will induce the Peierls instability and form the charge density waves ( CDW) below a characteristic temperature. 在准一维导体(如蓝青铜)中,由于其结构强烈的各向异性及特殊的费米面拓扑结构导致晶格的Peierls失稳,从而伴随形成电荷密度波(CDW)。
ⅲ-nitrides are polar semiconductor with low density of surface states, so that the Fermi level pinning is rather weak and the surface treatments have obvious influence on contact characteristics. 氮化物半导体是一种极性材料,表面态密度较低,费米能级钉扎效应较弱,表面处理能显著影响接触特性。
Study on the superconductivity of yba_2cn_3o_ ( 7-y)(ⅰ) effect of the capping oxygen ( o_ ⅳ) displacement on the band electronic structure, the Fermi surface and the density of state in the orthorhombic phase YBa2Cu3O(7-y)体系高Tc的理论研究(Ⅰ)&帽氧原子(OⅣ)的位移对正交相电子能带结构、Fermi面及Fermi面电子态密度的影响
Therefore Matter at sufficiently small temperature will take the form of a color superconductivity, in which there is a condensate of Cooper pairs of quarks near the Fermi surface. 因此在很低的温度时夸克物质将呈现色超导形式,这时费米面附近的夸克因为吸引而形成Cooper对。
Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. 磁击穿发生在自旋向上和向下的两片Fermi面之间。
Experimental g_c values are given for most of the extremal orbits on the lead Fermi surface for high-symmetry directions of [ 100], [ 110], and [ 111] of the magnetic field. 文中给出了在磁场平行于[100],[110],[111]三个高对称方向上费密面各极值轨道上的gc实验值。
Therefore, the densities of states at Fermi surface for these alloys are higher than that of pure Ti, this is the reason why the alloys have much higher superconductive transition temperature Tc than pure Ti. 因此,它们的费密面的电子态密度也比纯Ti的高,这正是Ti-Pd系合金的超导转变温度Tc比纯Ti的有较大幅度提高的原因。
As a very powerful tool in surface science, the Scanning Tunneling Microscope ( STM) has been used intensively in topographic measurement and electronic-state-detection near the Fermi level of the solid surface. 表面科学中,扫描隧道显微镜(STM)己成为一种极其重要的测量分析手段,用于对固体表面形貌的测量和费米面附近电子态的探测。
Recent work on the Fermi surface has shown that nesting occurs at four points in the antiferromagnetic Brillouin zone where spin waves exist and that the superconducting energy gap is larger at these points. 对反铁磁基态费米表面的研究发现在布里渊区中四点产生了费米表面的嵌套现象,这几点超导能隙增大,证实自旋密度波的存在。
The surface condition and the present of active high-valence atom with d-orbital states close to Fermi lever are the main contributions to improve the surface energy. 薄膜的表面状态和在靠近费米能级处引入d轨道的活性高价原子的存在是促进表面能提高的主要原因。
In order to reveal the mechanism involved, XPS was employed to investigate the changes in the position of surface Fermi level and surface state density. 为了研究其改善机理,利用XPS对表面费米能级以及表面态密度的变化进行了分析。
Density of states results showed the existence of a large carrier concentration on both sides of the Fermi surface, which would induce large leakage current at ON state. Si doping can be used to increase the resistance. 态密度结果显示费米面两侧存在较高的载流子浓度,容易导致开态漏电流,可通过掺杂Si来增加阻值。
Electronic specific heat at superconducting state is very important to know the electronic behaviors, predicate the bands number which crossover the Fermi surface. 电子比热容在研究超导物理问题时是非常重要的,通过它我们可以了解电子的行为,并且可以用来判断与费米面相交叉的能带数目。